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Nuclear Fusion and Plasma Physics ›› 2004, Vol. 24 ›› Issue (1): 63-66.

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Measurement of plasma parameters in rf-biased ECR-PECVD#br#

XU Shu-hua,REN Zhao-xing,SHEN Ke-ming   

  1. (Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031)
  • Received:2002-12-25 Revised:2003-09-15 Online:2004-03-15 Published:2024-11-26

射频偏置 ECR-PECVD 等离子体参数测量

许沭华,任兆杏,沈克明   

  1. (中国科学院等离子体物理研究所,合肥 230031)
  • 作者简介:许沭华(1965-),男,副研究员,博士,中国科学院等离子体物理研究所博士后,研究方向:薄膜技术,低温等离子体应用。
  • 基金资助:
    国家自然科学基金项目(19835030)

Abstract: The plasma parameters in an rf-biased ECR-PECVD have been measured using double Langmuir probes.The effect of microwave power, magnetic electrical curent and gas pressure on the plasma parameters in ECR-PECVD under rf biasing have also been measured.The results indicate that the rf biasing in our dual ECR-rf configuration enhances the electron temperature,but the plasma density is mainly affected by ECR.

Key words: ECR-PECVD, Rf-bias, Double probe, Electron temperature, Plasma density

摘要: 利用双探针对 ECR-PECVD 装置中基片在射频偏置下的等离子体参数进行了测量。同时测量了在射频偏置下微波功率、磁场电流、进气量等参数对 ECR-PECVD 等离子体参数的影响。结果表明,在 ECR-PECVD 等离子体装置中,基片射频偏置对电子温度有影响,而等离子体密度主要由微波功率所决定。

关键词: ECR-PECVD, 射频偏置, 双探针, 电子温度, 等离子体密度

CLC Number: