The molecular dynamics simulations of interactions between CH3 and tungsten materials of different temperature are carried out, based on the reactive empirical band order function to understand the possible mechanisms of C, H deposition and sputtering on the first wall in fusion device. The energy of incident CH3 particle is 200eV. The simulated results show that the deposition atoms of C and H increase with incident particle increasing, when substrate temperature is 100K the deposition of C atoms was more than others temperatures’, and when the substrate temperature is 1200K, the incident is greater than 1.51016cm-2, the deposited C atoms is less than other substrate temperatures’ deposited C atoms. CH3 was decomposed during CH3 bombardment with substrate, about 9% of the CH3 was completed decomposition; about 40% of the CH3 was decomposited to CH2 and H; about 23% of the CH3 was decomposited to CH and 2H. The scattering angle of C and H atoms are mainly distributed between 5° and 85°, the distribution of scattering angle maximum of C atom was 40~50° or 50~60°, the minimum distribution of C atom at between 0 and 10° or between 80° and 90°; the energy of scattered C atoms is between 0 and 140eV, more than 98% scattering atoms is between 0 and 120eV among of them, and the average scattering energy increases with the increase of substrate temperature, from 65.5eV increased to 68.5eV, The distribution maximum of H atom was 40~50°, the minimum distribution of H atom at between 0 and 10°. Scattering energy of H atom is between 0 and 140eV, but about 70% of the scattering H atomic energy within 40eV, the average scattering energy decreases with the increase of substrate temperature, from 13.92eV decreased to 13.05eV.
