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NUCLEAR FUSION AND PLASMA PHYSICS ›› 2005, Vol. 25 ›› Issue (1): 74-77.

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Metal ion implantation source with a permanent magnetic field

MU Zong-xin1, LONG Zhen-hu1, LI Guo-qing1, GUAN Bing-yu2   

  1. ( 1. State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024; 2. Shenyang Beiyu Vacuum Co. Ltd., Shenyang 110045)
  • Received:2003-12-10 Revised:2004-08-20 Online:2005-03-15 Published:2024-09-06

强流磁约束金属离子注入源

牟宗信1,龙振湖1,李国卿1,关秉羽2   

  1. (1.大连理工大学三束材料改性国家重点实验室,大连116023; 2.沈阳市北宇真空设备厂,沈阳110000)
  • 作者简介:牟宗信(1969-),男,辽宁省大连市人,硕士,讲师,1998年毕业于大连理工大学等离子体物理专业,现从事低温等离子体应用研究。

Abstract:

The metal ion implanter has a maximum uniform beam current of 30mA with a pulse duration of 1ms at an accelerating voltage of 30kV and the frequency of 50Hz. The array of permanent magnets distributes around the ion chamber, confines the plasma and improves the uniformity of the radial ion density. The result indicates that the extractive characteristic of the implantor is improved.

Key words: Plasma, Ion beams, Plasma source

摘要:

设计和制造了适合工业应用的强流金属离子源。离子源的电弧阴、阳电极之间和放电室壁采用永磁体阵列形成导流、屏蔽磁场,改进了电弧的放电特性和提高等离子体密度。离子注入源在加速电压为30kV、50 Hz 条件时,平均束流流强约为30mA,调试结果表明附加磁场提高了离子源性能。

关键词: 等离子体, 离子束, 离子源

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