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核聚变与等离子体物理 ›› 2011, Vol. 31 ›› Issue (3): 207-212.

• 等离子体物理学 • 上一篇    下一篇

C+轰击铍的分子动力学模拟

孙伟中1,赵成利2,张浚源1,陈 峰2,潘宇东3,苟富均1, 4   

  1. (1. 四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室,成都 610064; 2. 贵州大学等离子体与材料表面作用研究所,贵阳550025; 3. 核工业西南物理研究院,成都 610041;4. 荷兰皇家科学院等离子体所,荷兰 2300)
  • 收稿日期:2010-09-29 修回日期:2010-11-15 发布日期:2011-09-15
  • 作者简介:孙伟中(1986-),男,江苏盐城人,硕士研究生,主要从事等离子体与材料表面相互作用的研究。
  • 基金资助:

    国际热核聚变实验堆(ITER)计划专项(2009GB104006);贵州省优秀青年科技人才培养计划资助课题(700968101)

Molecular dynamics simulation of beryllium bombardment with C+

SUN Wei-zhong1, ZHAO Cheng-li2, ZHANG Jun-yuan1, CHEN Feng2, PAN Yu-dong3, GOU Fu-jun 1, 4   

  1. (1. Key Laboratory of Radiation Physics and Technology Sichuan University, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064; 2. Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025; 3. Southwestern Institute of Physics, Chengdu 610041; 4. Institute of Plasma Physics Royal Netherlands Academy of Arts and Sciences, 2300, Netherlands)
  • Received:2010-09-29 Revised:2010-11-15 Published:2011-09-15

摘要:

使用分子动力学模拟方法研究了入射能量对C+离子与Be样品表面相互作用的影响。模拟结果表明,随着C+离子的入射能量增大,C+离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C原子数量变化不大,在C+离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C+离子注入剂量的增加,Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中,在样品表面形成一个富C层,减缓了样品中Be原子的溅射速率,起到了保护Be样品的作用。

关键词: 分子动力学, 入射能量, 溅射, 滞留, 富C层

Abstract:

Molecular dynamic simulations were performed to study the effect of the incident energy on the interreaction of C+ ion with Be sample surface. The simulated results show that with increasing C+ incident energy, the C+ implantation depth increases and the sputtering yield of Be increases near-linearly. However, the retention rate of C in the sample slightly changes. During the initial stage of the C+ bombarding Be sample, the sputtering yield of Be in sample increases sharply. With increasing exposure to C+, the sputtering yield of Be decreases and reaches saturation gradually. It is found that the formation of a carbon-rich layer near the sample surface region can protect beryllium sample from sputtering.

Key words: Molecular dynamics, Incident energy, Sputtering, Retention, Carbon-rich layer

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