入射能量对H2+与SiC表面相互作用影响的分子动力学模拟

核聚变与等离子体物理 ›› 2011, Vol. 31 ›› Issue (1): 85-90.

入射能量对H2+与SiC表面相互作用影响的分子动力学模拟

孙伟中1，赵成利2，刘华敏1，张浚源1，吕晓丹2，潘宇东3，苟富均1, 4

(1. 四川大学原子核科学技术研究所，辐射物理及技术教育部重点实验室，成都610064； 2. 贵州大学等离子体与材料表面作用研究所，聚变材料课题组，贵阳550025；3. 核工业西南物理研究院，成都 610041；4. 荷兰皇家科学院等离子体所，荷兰 2300)

收稿日期:2010-05-16 修回日期:2010-12-14 出版日期:2011-03-15 发布日期:2011-03-03
作者简介:孙伟中(1986-)，男，江苏人，硕士研究生，主要研究等离子体与材料表面相互作用。
基金资助:
国际热核聚变实验堆(ITER)计划专项资助课题(2009GB104006)；贵州省优秀青年科技人才培养计划资助课题(700968101)

Molecular Dynamics Simulation of incident energy effects of H2+ interactions with SiC surface

SUN Wei-zhong1, ZHAO Chen-li2, LIU Hua-min1, ZHANG Jun-yuan1, LÜ Xiao-dang2, PAN Yu-dong3, GOU Fun-jun 1, 4

(1. Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064; 2. Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025; 3. Southwestern Institute of Physics, Chengdu 610041; 4. FOM Institute for Plasma Physics, 3439 MN Nieuwegein, Netherlands)

Received:2010-05-16 Revised:2010-12-14 Online:2011-03-15 Published:2011-03-03

摘要/Abstract

摘要：

用分子动力学方法研究了入射能量对H₂⁺与SiC样品表面相互作用的影响。模拟结果表明，在H₂⁺轰击SiC样品表面的初始阶段，样品中H原子的滞留量增加较快，其后，增加的速率减慢，并逐渐趋于饱和。入射能量越大，样品中H原子的滞留量也就越大。样品在H₂⁺的轰击下，样品Si、C原子会发生刻蚀。入射能量越大，Si和C原子的刻蚀量越大。在相同入射能量下，Si原子的刻蚀量大于C原子。生成的产物中，以H，H₂和SiH₄为主；产物H₂的量随着能量的增加而减小。其他产物随着入射能量的增加而增加。

关键词: 分子动力学, 入射能量, 滞留H原子, 刻蚀

Abstract:

Molecular dynamic simulations were performed to study H₂⁺ ions bombarding SiC with incident energies of 1, 5, 10 and 15eV. The simulated results show that the retention of H atoms on the surface increases with increasing energy. During the initial stage, the amount of retention H atoms sharply increases and then the retention of H atoms reaches saturation. Si and C atoms are removed from the surface with energies of 10 and 15eV. The number of removed Si atoms is larger than that of C atoms. For the products, H, H₂ and SiH₄ are dominant. And with increasing incident energies, the number of H₂ species decreases and the other species increase.

Key words: Molecular dynamics, Incident energy, Retention H atoms;? Removed

中图分类号:

TL62+7

孙伟中1，赵成利2，刘华敏1，张浚源1，吕晓丹2，潘宇东3，苟富均1, 4. 入射能量对H2+与SiC表面相互作用影响的分子动力学模拟[J]. 核聚变与等离子体物理, 2011, 31(1): 85-90.

SUN Wei-zhong, ZHAO Cheng-li, LIU Hua-min, ZHANG Jun-yuan, Lü Xiao-dang, PAN Yu-dong, GOU Fu-jun. Molecular Dynamics Simulation of incident energy effects of H2+ interactions with SiC surface[J]. NUCLEAR FUSION AND PLASMA PHYSICS, 2011, 31(1): 85-90.

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