射频对非平衡磁控溅射沉积Cu膜的影响

核聚变与等离子体物理 ›› 2007, Vol. 27 ›› Issue (3): 264-268.

射频对非平衡磁控溅射沉积Cu膜的影响

齐雪莲，任春生，张健，麻冰欣，马腾才

(大连理工大学三束材料改性国家重点实验室，大连 116024)

收稿日期:2006-10-07 修回日期:2007-05-16 出版日期:2007-09-15 发布日期:2011-08-15
作者简介:齐雪莲(1978-)，女，辽宁省黑山县人，博士研究生，从事低温等离子体材料制备与薄膜改性研究。
基金资助:
国家自然科学基金资助项目(50277003和10505005)

Radio-frequency influences on Cu film deposited by unbalanced magnetron sputtering

QI Xue-lian, REN Chun-sheng, ZHANG Jian, MA Bing-xin, MA Teng-cai

(State Key Lab of Materials Modification by laser, electron and ion beams, Dalian University of Technology, Dalian 116024)

Received:2006-10-07 Revised:2007-05-16 Online:2007-09-15 Published:2011-08-15

摘要/Abstract

摘要：

用射频等离子体增强非平衡磁控溅射在Si100 基底上沉积了金属Cu膜。研究了偏压，射频功率和磁场等沉积参数对膜性能的影响。用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和电子能谱(EM)检测了膜的表面形貌, 结构和成分。结果表明，射频放电有利于表面均匀光滑、电导率高的Cu沉积膜的形成；沉积参数对沉积膜的性能有重要的影响。

关键词: 射频, 非平衡磁控溅射, Cu膜

Abstract:

Metallic copper films are deposited on Si100 substrate by radio-frequency plasma enhanced unbalanced magnetron sputtering, and film performance is studied by changing deposition parameters such as bias voltage, rf power and magnetron. The morphology, structure and element of the films are examined by scanning electron microscopy, atomic force microscope (AFM), X-ray diffraction (XRD) and electron spectroscopy (EM). The results show that rf discharge has advantages in depositing equality smooth and high conductivity Cu film and deposition parameters are important for film performance.

Key words: Radio-frequency, Unbalanced magnetron sputtering, Cu film

中图分类号:

TB383

齐雪莲，任春生，张健，麻冰欣，马腾才. 射频对非平衡磁控溅射沉积Cu膜的影响[J]. 核聚变与等离子体物理, 2007, 27(3): 264-268.

QI Xue-lian, REN Chun-sheng, ZHANG Jian, MA Bing-xin, MA Teng-cai. Radio-frequency influences on Cu film deposited by unbalanced magnetron sputtering[J]. NUCLEAR FUSION AND PLASMA PHYSICS, 2007, 27(3): 264-268.

参考文献

[1] Inberg A, Shacham-Diamand Y, Rabinovich E, et al. Electroless-deposited Ag-W films for microelectronics applications[J]. Thin Solid Films, 2001, 389: 213-218.

[2] Cao D M, Wang T, Feng B, et al. Amorphous hydrocar- bon based thin films for high-aspect-ratio MEMS appli- cations[J]. Thin Solid Films, 2001, 398-399: 553-559.

[3] Kwok T, Finnegan J, Johnson D. Effects of line length and bend structure on electromigration lifetime in Al-Cu submicron interconnects[R]. IEEE VLSI Multilevel Interconnection Conf. (Santa Clara, CA), 1988. 436-445.

[4] 吴德馨. 迈进二十一世纪的集成电路[J]. 世界科技研究与发展, 1999, 21(4): 1-3.

[5] Harper J M E, Colgan E G, Hu C K, et al. Materials issues in copper interconnections[R]. MRS Bulletin, 1994, 23-29.

[6] Murarka S P. Multilevel interconnections for ULSI and GSI era[J]. J. Mater. Sci. Eng., 1997, R19(3-4): 87- 151.

[7] Hopwood J. Review of inductively coupled plasmas for plasma processing[J]. Plasma Sources Sci. Techn.,1992, 1: 109-116.

[8] Keller J H, Foster J C, Barnes M S. Novel radio-fre- quency induction plasma processing techniques[J]. J. Vac. Sci. Techn., 1993, A11(5): 2487-2491.

[9] Dickson M, Zhong G, Hopwood J. Radial uniformity of an external-coil ionized physical vapor deposition source[J]. J. Vac. Sci. Techn. B, 1998 , Mar/Apr 16 (2): 523-531.

[10] Liu C S, Chen L J. Effects of substrate cleaning and film thickness on the epitaxial growth of ultrahigh vacuum deposited Cu thin films on (001) Si [J]. Applied Surface Science, 1996, 92: 84-88.

[11] Liu H D, Zhao Y P, Ramannath G., et al. Thickness dependent electrical resistivity of ultrathin (|<|40 nm) Cu films[J]. Thin Solid Films , 2001, 384: 151-156.

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