N2-Ar rf discharge plasma is used in numerous widespread applications, such as the etching in microelectronics industry, the preparation of nitrides film and the metal surface nitriding and so on. A PIC/MC model for the N2-Ar mixture gas capacitively coupled rf discharge processes was developed, in which we describe the behaviour of the main charged particles(e-, N2+, N+, Ar+)and take into account 21 kinds of collisions of charged particles(e-, N2+, N+, Ar+)with ground-state neutral N2 and Ar. It turned out that however in the N2-Ar mixture gas discharge or N2 gas discharge, the density of charged particles all has the maximum in the plasma region, especially, N2+ is the main particle. In the N2 gas capacitively coupled rf discharge, with the adding of 10% Ar, the mean energy of N+ is increasing, and the high-energy proportion of the two particles (N2+, N+) in the rf electrode are both increasing. So it was important for us to know the microscopic mechanism of N2-Ar rf discharge.