The effect of pulsed plasma duty cycle on the characters of porous silica films

NUCLEAR FUSION AND PLASMA PHYSICS ›› 2010, Vol. 30 ›› Issue (2): 189-192.

• Non-Fusion Plasma Applications • Previous Articles

The effect of pulsed plasma duty cycle on the characters of porous silica films

YANG Qin-yu, LIU Lei, DING Ke, ZHANG Jing, WANG Qiang-rui

(1. Donghua University, Materials College , Shanghai 201620; 2. DonghuaUniversity, Science College, Shanghai 201620; 3. Donghua University, Member of Magnetic Confinement Fusion Research Center, Ministry of Education, Shanghai 201620)

Received:2009-08-05 Revised:2010-03-17 Online:2010-06-15 Published:2010-06-03

脉冲偏压占空比对多孔氧化硅薄膜性质的影响

杨沁玉，刘磊，丁可，张菁，王庆瑞

(1. 东华大学材料学院，上海 201620；2. 东华大学理学院，上海201620； 3. 东华大学磁约束核聚变教育部研究中心，上海 201620)

作者简介:杨沁玉(1975-)，女，河南省新乡市人，讲师，从事低温等离子体应用研究。
基金资助:
国家自然科学基金资助项目(10775031)；中央高校基本科研业务费专项资金资助项目(2010A09-4-1)

Abstract

Abstract: Porous silica films were prepared on the glass substrate by plasma enhanced chemical vapor deposition (PECVD) system modulated by pulse negative bias voltage and silane as precursor gas. During duty cycle increased from 0.162 to 0.864 maintaining bias voltage of deposition region at -350V in the reaction process, the configuration, composition and microstructure of the samples were investigated intensively. The scanning electron microscope (SEM) revealed that the size of silica particles became smaller and silica films got more porous and fleecy when the duty cycle increases. The Raman spectra and Fourier transform infrared spectra (FTIR) revealed that amorphous silicon and Si-H bonds weakened till vanished at higher duty cycle. The proportions of Si-O-Si bridge bonds enhanced while the duty cycle increasing.

Key words: Duty cycle, Porous silica, Raman spectra, FTIR

摘要： 采用由脉冲负偏压调节的等离子体增强化学气相沉积方法，以硅烷为源气体，在玻璃基片上沉积得到了多孔二氧化硅薄膜。将反应过程中加在沉积区域的脉冲偏压固定在-350V，当占空比从0.162增大到0.864时，薄膜样品的形貌、成份和结构均不相同。扫描电镜照片表明，组成多孔氧化硅薄膜的颗粒在占空比增大时变得细腻，并且薄膜整体变得多孔且蓬松。拉曼光谱和红外光谱结果显示，薄膜样品中的非晶硅和Si-H键在较高的占空比下减弱甚至消失。占空比升高时氧化硅桥键所占比例持续增加。

关键词: 占空比, 多孔氧化硅, 拉曼光谱, 红外光谱

CLC Number:

O539

YANG Qin-yu, LIU Lei, DING Ke, ZHANG Jing, WANG Qiang-rui. The effect of pulsed plasma duty cycle on the characters of porous silica films[J]. NUCLEAR FUSION AND PLASMA PHYSICS, 2010, 30(2): 189-192.

杨沁玉，刘磊，丁可，张菁，王庆瑞. 脉冲偏压占空比对多孔氧化硅薄膜性质的影响[J]. 核聚变与等离子体物理, 2010, 30(2): 189-192.

References

[1] Hrubesh L W, Poco J F. Thin aerogel films for optical, thermal, acoustic and electronic applications [J]. Journal of Non-Crystalline Solids, 1995, 188(12): 46-53.

[2] Marliere C, Woignier T, Etienne P, et al. Two fractal structures in aerogel [J]. Journal of Non-Crystalline Solids, 2001, 285(1-3): 175-180.

[3] Petrovae E A, Bogoslovskaya K N, Balagurov L A, et al. Room temperature oxidation of porous silicon in air [J]. Materials Science and Engineering B,2000, 69: 152.

[4] Watanabe K, Takeoka S, Fujii M, et al. Photolumine- scence decay dynamics of SiO₂ films containing Si nanocrystals and Er [J]. Journal of Luminescence, 2000, 87-89: 426-428.

[5] Soum-Glaude A, Thomas L, Dollet A, et al. Argon/ tetramethysilane PECVD: from process diagnostic and modeling to a-Si:C:H hard coating composition [J]. Diamond and Related Materials, 2007, 16(4-7): 1259.

[6] Giangregorio M M, Losurdo M, Sacchetti A, et al. Correlation between structure and optical properties of Si-based alloys deposited by PECVD [J]. Thin Solid Films, 2006, 511-512: 598-602.

[7] Park M-B, Cho N-H. Structural, chemical and optical features of nanocrystalline Si films prepared by PECVD techniques [J]. Applied Surface Science, 2002, 190(1-4): 151-156.

[8] Vladimir Kochergin, Helmut Foell. Novel optical elements made from porous Si [J]. Materials Science and Engineering: R: Reports, 2006, 52 (4-6): 93-140.

[9] 晁明举, 张红瑞, 梁二军. 多孔硅的拉曼光谱研究[J]. 光散射学报, 2002, 14(1): 40-43.

[10] 夏磊, 周荃, 徐金洲, 等. 纳米多孔硅基薄膜的常压等离子体化学气相沉积过程研究 [J]. 东华大学学报, 2008, 34(1): 117-121.

[11] 马康, 王海燕, 吴芳, 等. PECVD低温制备微晶硅薄膜的研究 [J]. 人工晶体学报, 2008, 37(1): 97-101.

[12] Taro Toyoda,Junya Kobayashi,Qing Shen.Correlation between crystal growth and photosensitization of nanostructured TiO₂ electrodes using supporting Ti substrates by self-assembled CdSe quantum dots [J]. Thin Solid Films, 2008, 516(9)2426-2431.

[13] Beena D, Lethy K J, Vinodkumar R, et al . Influence of substrate temperature on the properties of laser ablated indium tin oxide films [J]. Solar Energy Materials and Solar Cells, 2007, 91(15-16): 1438-1443.

[14] Pereyra I, Alayo M I. High quality low temperature DPECVD silicon dioxide [J]. Journal of Non-Crystalline Solids, 1997, 212(2-3): 225-231.

[15] Criado D, Alayo M I , Pereyra I, et al. Structural analysis of silicon oxynitride films deposited by PECVD [J]. Materials Science and Engineering B, 2004, 112(2-3): 123-127.

[16] Ma Zhongyuan, Han Peigao, Huang Xinfan, et al.Enhanced green to red photoluminescence in thermally annealed of amorphous-Si:H/SiO₂ multilayers[J]. Thin Solid Films, 2006, 515(4-5): 2322-2325.

The effect of pulsed plasma duty cycle on the characters of porous silica films

脉冲偏压占空比对多孔氧化硅薄膜性质的影响

PDF

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 1

Recommended Articles

Metrics