关键词: 等离子体浸没注入, 超浅结, 感性耦合等离子体

Abstract:

A plasma immersion ion implantation(PIII) system based on inductively coupled plasma(ICP) technology was designed. The PIII system had a cylindrical chamber, and a radio frequency(RF) power was used to sustain discharge and a pulsed voltage source was provided to bias the wafer. The RF power was coupled into chamber by a non-coplanar two-turn circular structure coil. A Langmuir probe was connected to the PIII system to diagnose the plasma parameters. The probe diagnosis indicated that plasma ion density of the system achieves 10¹⁷m^-3, the uniformity of the ion density along radial direction achieves 3.53%. Boron (B) and phosphorus (P) doping experiments were performed on the system. Results from second ion mass spectrum (SIMS) tests showed that the measured injection depth is about 10nm and the shallowest is 8.6 nm (at 10¹⁸cm^-3), the peak ion concentration is below the surface of the wafer, and the ion dose reaches above10¹⁵cm^-2 and the abrupt 2.5 nm/decade.

Key words: Plasma immersion ion implantation, Ultra shallow junction (USJ), Inductively coupled plasma