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核聚变与等离子体物理 ›› 2008, Vol. 28 ›› Issue (2): 129-131.

• 等离子体物理学 • 上一篇    下一篇

SHML模型计算Sn等离子体的平均离化度

闫安英1,姜明1,戚作涛2,包兴明3   

  1. (1. 西南民族大学电气信息工程学院,成都 610041;2. 成都信息工程学院光电技术系,成都 610225; 3. 四川理工学院物理系,自贡 643000)
  • 收稿日期:2007-11-30 修回日期:2008-02-13 出版日期:2008-06-15 发布日期:2011-02-21
  • 作者简介:闫安英(1965-),女,河北怀安人,硕士,副教授,从事等离子体研究和教学工作。

Theoretical calculation of average ionization stage of Sn plasma by SHML model

YAN An-ying1, JIANG Ming1, QI Zuo-tao2, BAO Xing-ming3   

  1. (1. Electric Information and Engineering College, Southwest University for Nationalities, Chengdu 610041; 2. Department of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225;3. Department of Physics, Sichuan University of Science & Engineering, Zigong 643000)
  • Received:2007-11-30 Revised:2008-02-13 Online:2008-06-15 Published:2011-02-21

摘要:

利用考虑l 能级分裂的屏蔽氢离子模型(SHML),计算了Sn在密度为0.00110g•cm-3温度为1002000eV时的平均离化度。给出了平均离化度随密度及温度的变化关系,并分析了出现“平台”的原因。

关键词: 平均离化度, SHML模型, Sn等离子体

Abstract:

The screened hydrogen-ion model with l splitting is proposed to calculate the average ionization stage (AIS) of Sn plasma in the temperature of 1002000eV and density of 0.00110g•cm-3. The relationships of AIS with density and temperature are given, and the “flat-roof” phenomenon is discussed.

Key words: Average ionization stage, Screened hydrogenic model for splitting, Sn plasma

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