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核聚变与等离子体物理 ›› 2021, Vol. 41 ›› Issue (4): 656-663.DOI: 10.16568/j.0254-6086.202104012

• 核聚变工程技术 • 上一篇    下一篇

集成门极换流晶闸管电学模型的优化及参数提取

曾思哲 1, 2,黄连生*1, 2,陈晓娇 1,何诗英 1,陈 涛 1, 2   

  1. (1. 中国科学院合肥物质科学研究院等离子体物理研究所,合肥 230031;2. 中国科学技术大学,合肥 230026) 
  • 收稿日期:2020-01-07 修回日期:2021-01-08 出版日期:2021-12-15 发布日期:2022-01-11
  • 作者简介:曾思哲(1995-),男,湖南长沙人,硕士,从事新型电力半导体器件模型相关研究。
  • 基金资助:
    国家重点研发计划(2017YFE0300504);聚变堆主机关键系统综合研究设施(2018-000052-73-01-001228) 

Optimization and parameter extraction of IGCT electrical model 

ZENG Si-zhe1, HUANG Lian-sheng1, 2, CHEN Xiao-jiao1, HE Shi-ying1, CHEN Tao1, 2    

  1. (1. Institute of Plasma, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031; 
    2. University of Science and Technology of China, Hefei 230026) 
  • Received:2020-01-07 Revised:2021-01-08 Online:2021-12-15 Published:2022-01-11

摘要: 在集成门极换流晶闸管(IGCT) 2T-3R-C 电学模型的基础上,针对其模型关断电压出现与实测波形不
符的振荡问题,建立了一种 IGCT 改进电学模型,并提出一套可用于改进电学模型的参数提取方法,给出改进电
学模型电路结构和器件参数。将模型的动态特性仿真结果与 4kA/4.5kV 型号 IGCT 的 4kA/4.5kV 等级实验结果、
3.5kA/4.5kV 等级实验结果以及现有 2T-3R-C 模型仿真结果进行对比,验证了改进电学模型的准确性、适用性、
优越性。 

关键词: 集成门极换流晶闸管, 改进电学模型, CFETR, 新型磁体电源

Abstract: An improved electrical model of the Integrated gate-Commutated Thyristor (IGCT) was 
established on the basis of the 2T-3R-C electrical model to solve the oscillation problem that the turn-off voltage 
of the model was inconsistent with the measured waveform, and a set of parameter extraction methods suitable for 
the improved electrical model was proposed. The simulation results of dynamic characteristics of the model were 
compared with the experimental results of 4kA/4.5kV and 3.5kA/4.5kV at the same voltage level and different 
current levels, as well as the simulation results of the existing 2T-3R-C model. The accuracy, applicability and 
superiority of the improved electrical model are verified. 

Key words: IGCT, Improved electrical model, CFETR, New magnet power supply 

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